| PART |
Description |
Maker |
| KM23C32000BETY KM23C32000BTY |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| AT49BV3218-90TI AT49BV3218-90CI AT49BV3218T-11CI A |
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Wakefield Thermal Solutions, Inc.
|
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
| K3N6C4000E-DC |
32M-Bit (2Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| A82DL32X4T |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only Simultaneous Operation Flash Memory
|
AMIC Technology
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
